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Electrical Characteristics of Quaternary Layered Structured Tl4In3GaS8 Crystals

Received: 2 October 2023     Accepted: 26 October 2023     Published: 9 November 2023
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Abstract

Despite the fact that numerous compositions of quaternary chalcogenides have recently been identified as having high thermoelectric capabilities and are still being studied for energy applications, experimental data on the electrical characteristics of Tl4In3GaS8 crystals is scarce. In this paper, growing quaternary Tl4In3GaS8 layered crystals have been prepared using the travelling solvent method (TSM). In this investigation, we evaluated the electrical conductivity and Hall effect measurements in the temperature range of 203 K to 443 K. These measurements allowed the determination of many physical parameters for both the majority and minority carriers, including carrier mobility, resistivity, carrier concentration, Hall coefficient, and conductivity. Our research revealed that our samples are n-type conductors. From the electrical conductivity and Hall effect studies, the forbidden energy gap and the impurity level's ionisation energy were determined for the crystals studied. At room temperature, the electrical conductivity, Hall coefficient, and carrier concentration were 0.85 Ω -1cm-1, 21.8 cm3C-1, and 2.997 x 1029 cm-3, respectively. Also, the Hall mobility was found to be 0.177 cm2/V. sec.

Published in American Journal of Science, Engineering and Technology (Volume 8, Issue 4)
DOI 10.11648/j.ajset.20230804.15
Page(s) 206-209
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2023. Published by Science Publishing Group

Keywords

Crystal Growth, Tl4In3GaS8, DC Electrical Conductivity, Hall Coefficient, Characterization of Semiconducting Quaternary Compounds

References
[1] Q. Guo, G. M. Ford, W. C. Yang, B. C. Walker, E. A. Stach, H. W. Hillhouse, R. Agrawal J. Am. Chem. Soc., 132 (2010), pp. 17384-17386 Finding PDF... CrossRefView Record in Scopus.
[2] Tsuji, Y. Shimodaira, H. Kato, H. Kobayashi, A. Kudo Chem. Mater., 22 (2010), pp. 1402-1409 Finding PDF... CrossRefView Record in Scopus.
[3] T. Fries, Y. Shapira, F. Palacio, M. C. Moron, G. J. McIntyre, R. Kershaw, A. Wold, E. J. McNiff Phys. Rev. B, 56 (1997), pp. 5424-5431 Finding PDF. View Record in Scopus.
[4] G. Nenert, T. T. M. Palstra J. Phys. Condens. Matter, 21 (2009), p. 176002 6 pp. Finding PDF... CrossRefView Record in Scopus.
[5] N. M. Gasanly, Journal of the Korean Physical Society, Vol. 50, No. 4, April 2007, pp. 1104-1108.
[6] D. Muller and H. Hahn, Z. Anorg. Allg. Chemie 438, 258 (1978).
[7] S. A. Hussein, and A. T. Nagat, Ctyst. Res. Technol. 24, 283 (1989).
[8] I. ISENBERG, B. R. RUSSELL, and R. F GREENE, 1948, Rev. scient. Instrum., 19, 685-688.
[9] S. R. Alharbi, Chin. Phys. B Vol. 22, No. 5 (2013) 058105.
[10] J. A. M. Abdulwahed, January 2014Life Science Journal 11 (4): 109-113.
[11] A. Salem, M. H. Alhossainy, Materials Chemistry and Physics Volume 263, 15 April 2021, 124436.
[12] M. Guc, E. Lähderanta, +5 authors K. Lisunov Materials Science, Medicine Scientific Reports 2017.
[13] Nagat, A. T., J. Phys. Condens. Matter, 1: 7921 (1989).
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  • APA Style

    Abdullah Mohammed Abdulwahed, J. (2023). Electrical Characteristics of Quaternary Layered Structured Tl4In3GaS8 Crystals. American Journal of Science, Engineering and Technology, 8(4), 206-209. https://doi.org/10.11648/j.ajset.20230804.15

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    ACS Style

    Abdullah Mohammed Abdulwahed, J. Electrical Characteristics of Quaternary Layered Structured Tl4In3GaS8 Crystals. Am. J. Sci. Eng. Technol. 2023, 8(4), 206-209. doi: 10.11648/j.ajset.20230804.15

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    AMA Style

    Abdullah Mohammed Abdulwahed J. Electrical Characteristics of Quaternary Layered Structured Tl4In3GaS8 Crystals. Am J Sci Eng Technol. 2023;8(4):206-209. doi: 10.11648/j.ajset.20230804.15

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  • @article{10.11648/j.ajset.20230804.15,
      author = {Jazi Abdullah Mohammed Abdulwahed},
      title = {Electrical Characteristics of Quaternary Layered Structured Tl4In3GaS8 Crystals},
      journal = {American Journal of Science, Engineering and Technology},
      volume = {8},
      number = {4},
      pages = {206-209},
      doi = {10.11648/j.ajset.20230804.15},
      url = {https://doi.org/10.11648/j.ajset.20230804.15},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajset.20230804.15},
      abstract = {Despite the fact that numerous compositions of quaternary chalcogenides have recently been identified as having high thermoelectric capabilities and are still being studied for energy applications, experimental data on the electrical characteristics of Tl4In3GaS8 crystals is scarce. In this paper, growing quaternary Tl4In3GaS8 layered crystals have been prepared using the travelling solvent method (TSM). In this investigation, we evaluated the electrical conductivity and Hall effect measurements in the temperature range of 203 K to 443 K. These measurements allowed the determination of many physical parameters for both the majority and minority carriers, including carrier mobility, resistivity, carrier concentration, Hall coefficient, and conductivity. Our research revealed that our samples are n-type conductors. From the electrical conductivity and Hall effect studies, the forbidden energy gap and the impurity level's ionisation energy were determined for the crystals studied. At room temperature, the electrical conductivity, Hall coefficient, and carrier concentration were 0.85 Ω -1cm-1, 21.8 cm3C-1, and 2.997 x 1029 cm-3, respectively. Also, the Hall mobility was found to be 0.177 cm2/V. sec.
    },
     year = {2023}
    }
    

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    T1  - Electrical Characteristics of Quaternary Layered Structured Tl4In3GaS8 Crystals
    AU  - Jazi Abdullah Mohammed Abdulwahed
    Y1  - 2023/11/09
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    N1  - https://doi.org/10.11648/j.ajset.20230804.15
    DO  - 10.11648/j.ajset.20230804.15
    T2  - American Journal of Science, Engineering and Technology
    JF  - American Journal of Science, Engineering and Technology
    JO  - American Journal of Science, Engineering and Technology
    SP  - 206
    EP  - 209
    PB  - Science Publishing Group
    SN  - 2578-8353
    UR  - https://doi.org/10.11648/j.ajset.20230804.15
    AB  - Despite the fact that numerous compositions of quaternary chalcogenides have recently been identified as having high thermoelectric capabilities and are still being studied for energy applications, experimental data on the electrical characteristics of Tl4In3GaS8 crystals is scarce. In this paper, growing quaternary Tl4In3GaS8 layered crystals have been prepared using the travelling solvent method (TSM). In this investigation, we evaluated the electrical conductivity and Hall effect measurements in the temperature range of 203 K to 443 K. These measurements allowed the determination of many physical parameters for both the majority and minority carriers, including carrier mobility, resistivity, carrier concentration, Hall coefficient, and conductivity. Our research revealed that our samples are n-type conductors. From the electrical conductivity and Hall effect studies, the forbidden energy gap and the impurity level's ionisation energy were determined for the crystals studied. At room temperature, the electrical conductivity, Hall coefficient, and carrier concentration were 0.85 Ω -1cm-1, 21.8 cm3C-1, and 2.997 x 1029 cm-3, respectively. Also, the Hall mobility was found to be 0.177 cm2/V. sec.
    
    VL  - 8
    IS  - 4
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Author Information
  • Physics Department, Umm Al-Qura University College, Qunfudah, KSA

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