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Research Article |

Electrical Characteristics of Quaternary Layered Structured Tl4In3GaS8 Crystals

Despite the fact that numerous compositions of quaternary chalcogenides have recently been identified as having high thermoelectric capabilities and are still being studied for energy applications, experimental data on the electrical characteristics of Tl4In3GaS8 crystals is scarce. In this paper, growing quaternary Tl4In3GaS8 layered crystals have been prepared using the travelling solvent method (TSM). In this investigation, we evaluated the electrical conductivity and Hall effect measurements in the temperature range of 203 K to 443 K. These measurements allowed the determination of many physical parameters for both the majority and minority carriers, including carrier mobility, resistivity, carrier concentration, Hall coefficient, and conductivity. Our research revealed that our samples are n-type conductors. From the electrical conductivity and Hall effect studies, the forbidden energy gap and the impurity level's ionisation energy were determined for the crystals studied. At room temperature, the electrical conductivity, Hall coefficient, and carrier concentration were 0.85 Ω -1cm-1, 21.8 cm3C-1, and 2.997 x 1029 cm-3, respectively. Also, the Hall mobility was found to be 0.177 cm2/V. sec.

Crystal Growth, Tl4In3GaS8, DC Electrical Conductivity, Hall Coefficient, Characterization of Semiconducting Quaternary Compounds

Jazi Abdullah Mohammed Abdulwahed. (2023). Electrical Characteristics of Quaternary Layered Structured Tl4In3GaS8 Crystals. American Journal of Science, Engineering and Technology, 8(4), 206-209.

Copyright © 2023 Authors retain the copyright of this article.
This article is an open access article distributed under the Creative Commons Attribution License ( which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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